AZO Materials publishes Teledyne e2v article "
The Development of CMOS Image Sensors" with a table comparing CCD and CMOS sensors. Although I do not agree with some of the statements in the table, here it is:
| Characteristic |
CCD |
CMOS |
| Signal from pixel |
Electron packet |
Voltage |
| Signal from chip |
Analog Voltage |
Bits (digital) |
| Readout noise |
low |
Lower at equivalent frame rate |
| Fill factor |
High |
Moderate or low |
| Photo-Response |
Moderate to high |
Moderate to high |
| Sensitivity |
High |
Higher |
| Dynamic Range |
High |
Moderate to high |
| Uniformity |
High |
Slightly Lower |
| Power consumption |
Moderate to high |
Low to moderate |
| Shuttering |
Fast, efficient |
Fast, efficient |
| Speed |
Moderate to High |
Higher |
| Windowing |
Limited |
Multiple |
| Anti-blooming |
High to none |
High, always |
| Image Artefact |
Smearing, charge transfer inefficiency |
FPN, Motion (ERS), PLS |
| Biasing and Clocking |
Multiple, higher voltage |
Single, low-voltage |
| System Complexity |
High |
Low |
| Sensor Complexity |
Low |
High |
| Relative R&D cost |
Lower |
Lower or Higher depending on series |
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