IEDM 2019: Sony SWIR Imager

Sony IEDM paper "High-definition Visible-SWIR InGaAs Image Sensor using Cu-Cu Bonding of III-V to Silicon Wafer" by S. Manda, R. Matsumoto, S. Saito, S. Maruyama, H. Minari, T. Hirano, T. Takachi, N. Fujii, Y. Yamamoto, Y. Zaizen, T. Hirano, and H. Iwamoto describes a process of bonding small InGaAs dies onto a Si wafer:

"We developed a back-illuminated InGaAs image sensor with 1280x1040 pixels at 5-um pitch by using Cu-Cu hybridization connecting different materials, a III-V InGaAs/InP of photodiode array (PDA), and a silicon readout integrated circuit (ROIC). A new process architecture using an InGaAs/InP dies-to-silicon wafer and Cu-Cu bonding was established for high productivity and pixel-pitch scaling. We achieved low dark current and high sensitivity for wavelengths ranging from visible to short-wavelength infrared (SWIR)."

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