LAAS (Laboratoire d'analyse et d'architecture des systèmes), ST, ISAE-SUPAERO, CEA, and CNR-IOM publish a paper "Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study" by Antoine Jay, Anne Hémeryck, Fuccio Cristiano, Denis Rideau, Pierre-Louis Julliard, Vincent Goiffon, Alexandre Le Roch, Nicolas Richard, Layla Martin-Samos, and Stefano de Gironcoli first presented at International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) in Sept. 2021.
"The origin of the random telegraph signal (RTS) observed in semiconductors-based electronic devices is still subject to debates. In this work, by means of atomistic simulations, typical clusters of defects as could be obtained after irradiation or implantation are studied as a possible cause for RTS. It is shown that:
(i) a cluster of defects is highly metastable,
(ii) it introduces several electronic states in the band gap,
(iii) it has an electronic cross section much higher than the one of point defects.
These three points can simultaneously explain why an electron- hole generation rate can switch with time, while respecting the experimental measurement."
The new theory is said to be able to explain all of the following RTN observations simultaneously:
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