An overview of the program is available here: https://www.isscc.org/program-
The advance program is available here: http://submissions.mirasmart.
Some sessions of interest to image sensors audience below:
Tutorial on "Solid-State CMOS LiDAR Sensors" (Feb 19)
Seong-Jin Kim, Ulsan National Institute of Science and Technology, Ulsan, Korea
This tutorial will present the technologies behind single-photon avalanche-diode (SPAD)-based solid-state
CMOS LiDAR sensors that have emerged to realize level-5 automotive vehicles and the metaverse AR/VR in mobile devices. It will begin with the fundamentals of direct and indirect time-of-flight (ToF) techniques, followed by structures and operating principles of three key building blocks: SPAD devices, time-to-digital converters (TDCs), and signal-processing units for histogram derivation. The tutorial will finally introduce the recent development of on-chip histogramming TDCs with some state-of-the-art examples.
Seong-Jin Kim received a Ph.D. degree from KAIST, Daejeon, South Korea, in 2008 and joined the Samsung Advanced Institute of Technology to develop 3D imagers. From 2012 to 2015, he was with the Institute of Microelectronics, A*STAR, Singapore, where he was involved in designing various sensing systems. He is currently an associate professor at Ulsan National Institute of Science and Technology, Ulsan, South Korea, and a co-founder of SolidVUE, a LiDAR startup company in South Korea. His current research interests include high-performance imaging devices, LiDAR systems, and biomedical interface circuits and systems.
Session 5 on Image Sensors (Feb 20)
5.1 A 3-Wafer-Stacked Hybrid 15MPixel CIS + 1MPixel EVS with 4.6GEvent/s Readout, In-Pixel TDC and On-Chip ISP and ESP Function
Guo et al.
OmniVision Technologies
5.2 1.22µm 35.6Mpixel RGB Hybrid Event-Based Vision Sensor with 4.88µm-Pitch Event Pixels and up to 10K Event Frame Rate by Adaptive Control on Event Sparsity
Kodama et al.
Sony Semiconductor Solutions
5.3 A 2.97µm-Pitch Event-Based Vision Sensor with Shared Pixel Front-End Circuitry and Low-Noise Intensity Readout Mode
Niwa et al.
Sony Semiconductor Solutions
5.4 A 0.64µm 4-Photodiode 1.28µm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower
Kim et al.
Samsung Electronics
5.5 A 16.4kPixel 3.08-to-3.86THz Digital Real-Time CMOS Image Sensor with 73dB Dynamic Range
Liu et al.
Chinese Academy of Sciences
5.6 A 400 117.7dB-DR SPAD X-Ray Detector with Seamless Global Shutter and Time-Encoded Extrapolation Counter
Park et al.
Yonsei University
5.7 55pW/pixel Peak Power Imager with Near-Sensor Novelty/Edge Detection and DC-DC Converter-Less MPPT for Purely Harvested Sensor Nodes
Ahmed & Okuhara et al.
National University of Singapore
5.8 Dual-Port CMOS Image Sensor with Regression-Based HDR Flux-to-Digital Conversion and 80ns Rapid-Update Pixel-Wise Exposure Coding
Gulve et al.,
University of Toronto
5.1, 5.2, 5.3, 5.6, 5.8 are also listed in the Demo Session on Monday Feb. 28.
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