"In this work, we reported a novel detecting/imaging device concept called field-effect CCD (FECCD), which is based on CCD’s MOS photogate but requires no charge transfer between pixels (i.e. “couple”). The “couple” is re-defined as the capacitive coupling21,22 between the semiconductor substrate and the 2D material (e.g. graphene). In the semiconductor, we created the potential well for charge integration by applying a gate voltage pulse. In the 2D material, the non-destructive and direct readout along with the charge signal amplification was realized by the strong field effect.
Besides, the charge integration in our FE-CCD is beneficial for the low-light-level condition, and gives high linearity for accurate image capturing. The FE-CCD also shows a broadband response from visible to short-wavelength infrared (SWIR) wavelength, and its power consumption is readily suppressed by using the 2D-material hetero-junction."
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| Schematic of our FE-CCD pixel. The gate can be driven by fast -sweeping or pulsed voltage. Holes (blue spheres) are generated and integrated in the potential well with corresponding electrons (red spheres) transferred to graphene. |
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| (a) The proof-of-concept FE-CCD linear array working in both random-access mode and charge transfer mode. Top: the FE-CCD linear array wire-bonded to the printed-circuit board. Bottom: the enlarged the optical image of the FE-CCD linear array. Scale bar: 50 um. (b, c) Reflection images at different integration time obtained by scanning the single graphene-based FE CCD pixel under the incandescent light (power density 5×10-5 W/cm2). |
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