» » Soitec Announces Substrate Breakthrough for 3D Image Sensors

Soitec Announces Substrate Breakthrough for 3D Image Sensors

GlobeNewsWire: Soitec announces the latest generation of SOI substrates in its Imager-SOI product line designed specifically for front-side imagers for NIR applications including advanced 3D image sensors. The new SOI wafers are now available in large volumes with high maturity for 3D cameras used in AR and VR, facial-recognition security systems, advanced human/machine interfaces and other emerging applications.

"Our newest Imager-SOI substrates represent a major achievement for our company and a smart way to increase performance in NIR spectrum domain, accelerating new applications in the growing 3D imaging and sensing markets," said Christophe Maleville, EVP of the Digital Electronics Business Unit at Soitec. "Innovative sensor design on SOI is achieved by leveraging our advanced know-how in ultrathin material layer transfer and our extensive manufacturing experience."

The wafers are available in 300mm with BOX from 15nm to 150nm and “Epi Ready” Top silicon from 50nm to 200nm.



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