» » IEDM 2019: Samsung 64MP Sensor with 0.8um Dual CG Pixel

IEDM 2019: Samsung 64MP Sensor with 0.8um Dual CG Pixel

Samsung IEDM 2019 paper "A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise" by Donghyuk Park, Seung-Wook Lee, Jinhwa Han, Dongyoung Jang, Heesang Kwon, Seungwon Cha, Mihye Kim, Haewon Lee, Sungho Suh, Woong Joo, Yunki Lee, Seungjoo Nah, Heegeun Jeong, Bumsuk Kim, Sangil Jung, Jesuk Lee, Yitae Kim, Chang-Rok Moon, and Yongin Park presents the company's latest generation sensor:

"A 0.8 μm-pitch 64 megapixels ultra high resolution CMOS image sensor has been demonstrated for mobile applications for the first time. Full-well capacity (FWC) of 6k e- was achieved in 0.8 μm pixels as the best in the world, and the advanced color filter (CF) isolation technology was introduced to overcome sensitivity degradation. Dual conversion gain (CG) technology was also first applied to mobile applications to improve the FWC performance of Tetracell up to 12k e-. In addition, highly refined deep trench isolation (DTI) and photodiode design significantly improved dark noise characteristics."



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