MPDP publishes a paper "Parasitic Coupling in 3D Sequential Integration: The Example of a Two-Layer 3D Pixel" by Petros Sideris, Arnaud Peizerat, Perrine Batude, Gilles Sicard, and Christoforos Theodorou from University Grenoble Alpes which is the extended version of the paper presented at 10th International Conference on Modern Circuits and Systems Technologies (MOCAST), Thessaloniki, Greece, 5–7 July 2021.
"In this paper, we present a thorough analysis of parasitic coupling effects between different electrodes for a 3D Sequential Integration circuit example comprising stacked devices. More specifically, this study is performed for a Back-Side Illuminated, 4T–APS, 3D Sequential Integration pixel with both its photodiode and Transfer Gate at the bottom tier and the other parts of the circuit on the top tier. The effects of voltage bias and 3D inter-tier contacts are studied by using TCAD simulations. Coupling-induced electrical parameter variations are compared against variations due to temperature change, revealing that these two effects can cause similar levels of readout error for the top-tier readout circuit. On the bright side, we also demonstrate that in the case of a rolling shutter pixel readout, the coupling effect becomes nearly negligible. Therefore, we estimate that the presence of an inter-tier ground plane, normally used for electrical isolation, is not strictly mandatory for Monolithic 3D pixels."
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